LED chip production capacity explosion flip - over LED chips into the mainstream trend
China in recent years, the United States, the European Union and other countries and regions in the world have adopted a policy of "the white", LED energy-saving light bulbs, a further promotion, market prices continued to decline and LED lighting products, these are directly drives the LED lighting permeability of rapid ascension. Within three to five years from 2014, the LED lighting industry will experience explosive growth and enter the "golden three years". As a leading link, the manufacturing technology of upstream LED chips and corresponding packaging technology jointly determine the future development speed of LED in the lighting field.
Flip the LED chip out
As the upstream chip production capacity expansion, packaging industry has stepped into small profit era, many enterprises in order to grab customers big price, fierce price competition and disordered industry ecosystem promotes industry began to demand new encapsulation process.
The innovation and application of flip chip technology with the advantages of improving the luminous efficiency and heat dissipation capability is the focus of packaging enterprises' research and development.
Flip-chip has better heat dissipation function than Flip-chip. At the same time, we have the design of epitaxial design, chip technology and chip graphic design that is suitable for reverse welding. Chip products have the advantages of low voltage, high brightness, high reliability and high saturation current density. In addition, it can integrate the protection circuit on the back - welded substrate, which is helpful to the reliability and performance of the chip. In addition, compared with the suit and vertical structure, use the flipchip bonded way, easier to realize multiple functions such as large power chip level module, integrated chip light source technology, the LED chip module to have larger yield and performance advantage. In terms of light efficiency, the inverted structure avoids the light absorption of the conductive layer on the P electrode and the light shading of the electrode. It can also improve the light efficiency by setting a reflective layer on the p-gan electrode.